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    Titel :

    Stimulated THz Emission from Si:P and Si:Bi under Resonant Intracenter Optical Pumping


    Beteiligte:
    Hovenier, J. N. (Autor:in) / Zhukavin, R. K. (Autor:in) / Gaponova, D. M. (Autor:in) / Muravjov, A. V. (Autor:in)

    Kongress:

    Annual international conference; 27th, Infrared and millimeter waves ; 2002 ; San Diego, CA



    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    WP5


    Anmerkungen:

    Known as IRMMW 2002. IEEE catalogue no 02EX561; See also 4542.305 vol 23 no 2 2002 for papers



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Stimulated THz emission from Si:P and Si:Bi under resonant intracenter optical pumping

    Hovenier, J.N. / Klaassen, T.O. / Zhukavin, R.K. et al. | IEEE | 2002


    Generation of THz emission from donor centers in silicon under intracenter optical pumping

    Pavlov, S.G. / Hovenier, J.N. / Klaassen, T.O. et al. | IEEE | 2004


    Induced Intracenter Optical Transitions in Compressed p-Ge

    Altukhov, I. V. et al | British Library Conference Proceedings | 1996


    Excitation spectroscopy of Si:P THz laser and infrared photoconductivity in Ge:Te

    Nakata, H. / Yokoyama, A. / Hatou, T. et al. | IEEE | 2004


    Influence of electronic correlations on the frequency-dependent hopping transport in Si:P

    Ritz, E. / Dressel, M. | British Library Conference Proceedings | 2008