We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO/sub 2/ lasers. The emission intensity decreases with increasing photon energy of the FEL in the range of about 120 meV. Photoconductivity spectra of Ge:Te has LO phonon structures.


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    Titel :

    Excitation spectroscopy of Si:P THz laser and infrared photoconductivity in Ge:Te


    Beteiligte:
    Nakata, H. (Autor:in) / Yokoyama, A. (Autor:in) / Hatou, T. (Autor:in) / Ohyama, T. (Autor:in) / Tsubouchi, N. (Autor:in) / Pavlov, S.G. (Autor:in) / Heubers, H.W. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    148447 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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