We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO/sub 2/ lasers. The emission intensity decreases with increasing photon energy of the FEL in the range of about 120 meV. Photoconductivity spectra of Ge:Te has LO phonon structures.
Excitation spectroscopy of Si:P THz laser and infrared photoconductivity in Ge:Te
2004-01-01
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Conference paper
Electronic Resource
English
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