We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO/sub 2/ lasers. The emission intensity decreases with increasing photon energy of the FEL in the range of about 120 meV. Photoconductivity spectra of Ge:Te has LO phonon structures.


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    Title :

    Excitation spectroscopy of Si:P THz laser and infrared photoconductivity in Ge:Te


    Contributors:
    Nakata, H. (author) / Yokoyama, A. (author) / Hatou, T. (author) / Ohyama, T. (author) / Tsubouchi, N. (author) / Pavlov, S.G. (author) / Heubers, H.W. (author)


    Publication date :

    2004-01-01


    Size :

    148447 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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