Frequency tunable radiation from the free electron laser FELIX was used to excite neutral phosphorus and bismuth donors embedded in bulk monocrystalline silicon. Lasing at terahertz frequencies has been observed at liquid helium temperature under resonant pumping of odd parity impurity states.


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    Titel :

    Stimulated THz emission from Si:P and Si:Bi under resonant intracenter optical pumping


    Beteiligte:
    Hovenier, J.N. (Autor:in) / Klaassen, T.O. (Autor:in) / Zhukavin, R.K. (Autor:in) / Gaponova, D.M. (Autor:in) / Muravjov, A.V. (Autor:in) / Orlova, E.E. (Autor:in) / Shastin, V.N. (Autor:in) / Pavlov, S.G. (Autor:in) / Hubers, H.-W. (Autor:in) / Riemann, H. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    124109 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Stimulated THz Emission from Si:P and Si:Bi under Resonant Intracenter Optical Pumping

    Hovenier, J. N. / Zhukavin, R. K. / Gaponova, D. M. et al. | British Library Conference Proceedings | 2002


    Generation of THz emission from donor centers in silicon under intracenter optical pumping

    Pavlov, S.G. / Hovenier, J.N. / Klaassen, T.O. et al. | IEEE | 2004


    Induced Intracenter Optical Transitions in Compressed p-Ge

    Altukhov, I. V. et al | British Library Conference Proceedings | 1996


    Excitation spectroscopy of Si:P THz laser and infrared photoconductivity in Ge:Te

    Nakata, H. / Yokoyama, A. / Hatou, T. et al. | IEEE | 2004


    Influence of electronic correlations on the frequency-dependent hopping transport in Si:P

    Ritz, E. / Dressel, M. | British Library Conference Proceedings | 2008