Compressively-strained InGaAsP QW active (/spl lambda/=732 nm) diode lasers achieve 2.9 W CW front-facet power from 100 /spl mu/m-wide apertures, with reliable operation demonstrated at 0.5 W CW. Record-high characteristic temperature coefficients; T/sub 0/=115 K and T/sub 1/=285 K, are obtained by growing on misoriented substrates.
High-power, reliable, 730 nm-emitting InGaAsP-active region diode lasers
01.01.1998
156010 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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