Compressively-strained InGaAsP QW active (/spl lambda/=732 nm) diode lasers achieve 2.9 W CW front-facet power from 100 /spl mu/m-wide apertures, with reliable operation demonstrated at 0.5 W CW. Record-high characteristic temperature coefficients; T/sub 0/=115 K and T/sub 1/=285 K, are obtained by growing on misoriented substrates.


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    Titel :

    High-power, reliable, 730 nm-emitting InGaAsP-active region diode lasers


    Beteiligte:
    Al-Muhanna, A. (Autor:in) / Wade, J.K. (Autor:in) / Earles, T. (Autor:in) / Mawst, L.J. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    156010 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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