Summary form only given. 0.78 /spl mu/m, Al-free active-region, compressively-strained (/spl Delta/a/a=0.85%) InGaAsP quantum well diode lasers have been grown by MOCVD. Broad-stripe (100 /spl mu/m-wide) devices exhibit low threshold current densities, 290 A/cm/sup 2/ (L=1 mm), and cw front-facet output powers of 2.2 W.


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    Titel :

    780 nm emitting Al-free active region diode lasers with compressively-strained InGaAsP quantum wells


    Beteiligte:
    Al-Muhanna, A. (Autor:in) / Wade, J.K. (Autor:in) / Mawst, L.J. (Autor:in) / Fu, R.J. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    147530 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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