780nm-emitting Al-free Active Region Diode Lasers with Compressively-Strained InGaAsP Quantum Wells
Annual meeting; 10th, IEEE: Lasers and Electro-Optics Society ; 1997 ; San Francisco; CA
01.01.1997
2 pages
Described as proceedings. IEEE cat no: 97CH36057
Aufsatz (Konferenz)
Englisch
LEOS , lasers , IEEE , electro-optics
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Optimization of 1 3 m InGaAsP compressively strained quantum-well lasers
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