Summary form only given. In summary we have developed a diode laser with a low threshold current density and a high efficiency using a compressively strained Al-free InGaAsP QW embedded in AlGaAs waveguides. Using the well established MOVPE for AlGaAs structures such diode lasers show comparable performance to best structures with Al-free waveguide and cladding layers grown by MBE.


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    Titel :

    High CW power diode lasers with unstrained and compressively strained InGaAsP-QWs in AlGaAs waveguides emitting at 800 nm


    Beteiligte:
    Erbert, G. (Autor:in) / Bugge, F. (Autor:in) / Oster, A. (Autor:in) / Sebastian, J. (Autor:in) / Staske, R. (Autor:in) / Vogel, K. (Autor:in) / Wenzel, H. (Autor:in) / Weyers, M. (Autor:in) / Traenkle, G. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    184398 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    Auger Recombination in Strained and Unstrained InGaAs/InGaAsP Multiple Quantum Well Lasers

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    Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers

    Fuchs, G. / Schiedel, C. / Hangleiter, A. et al. | IEEE | 1992