Summary form only given. In summary we have developed a diode laser with a low threshold current density and a high efficiency using a compressively strained Al-free InGaAsP QW embedded in AlGaAs waveguides. Using the well established MOVPE for AlGaAs structures such diode lasers show comparable performance to best structures with Al-free waveguide and cladding layers grown by MBE.
High CW power diode lasers with unstrained and compressively strained InGaAsP-QWs in AlGaAs waveguides emitting at 800 nm
01.01.1997
184398 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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