Summary form only given. In summary we have developed a diode laser with a low threshold current density and a high efficiency using a compressively strained Al-free InGaAsP QW embedded in AlGaAs waveguides. Using the well established MOVPE for AlGaAs structures such diode lasers show comparable performance to best structures with Al-free waveguide and cladding layers grown by MBE.
High CW power diode lasers with unstrained and compressively strained InGaAsP-QWs in AlGaAs waveguides emitting at 800 nm
1997-01-01
184398 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1997
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