Summary form only given. In summary we have developed a diode laser with a low threshold current density and a high efficiency using a compressively strained Al-free InGaAsP QW embedded in AlGaAs waveguides. Using the well established MOVPE for AlGaAs structures such diode lasers show comparable performance to best structures with Al-free waveguide and cladding layers grown by MBE.


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    Title :

    High CW power diode lasers with unstrained and compressively strained InGaAsP-QWs in AlGaAs waveguides emitting at 800 nm


    Contributors:
    Erbert, G. (author) / Bugge, F. (author) / Oster, A. (author) / Sebastian, J. (author) / Staske, R. (author) / Vogel, K. (author) / Wenzel, H. (author) / Weyers, M. (author) / Traenkle, G. (author)


    Publication date :

    1997-01-01


    Size :

    184398 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    High CW Power Diode Lasers with Unstrained and Compressively Strained InGaAsP-QWs in AlGaAs Waveguides Emitting at 800 nm

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