Summary form only given. 3 W CW output power is obtained from InGaAs-InGaAsP-InGaP uncoated, 100-/spl mu/m-wide-stripe, quantum well diode lasers grown by low-pressure MOCVD on exact (100) GaAs substrates. Lasers grown on misoriented substrates exhibit increased temperature sensitivity of threshold and differential quantum efficiency.


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    Titel :

    High CW output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation


    Beteiligte:
    Mawst, L.J. (Autor:in) / Bhattacharya, A. (Autor:in) / Nesnidal, M. (Autor:in) / Lopez, J. (Autor:in) / Botez, D. (Autor:in) / Morris, J.A. (Autor:in) / Zory, P. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    161824 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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