Summary form only given. 3 W CW output power is obtained from InGaAs-InGaAsP-InGaP uncoated, 100-/spl mu/m-wide-stripe, quantum well diode lasers grown by low-pressure MOCVD on exact (100) GaAs substrates. Lasers grown on misoriented substrates exhibit increased temperature sensitivity of threshold and differential quantum efficiency.
High CW output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation
1995-01-01
161824 byte
Conference paper
Electronic Resource
English
High CW Output Power InGaAs/InGaAsP/InGaP Diode Lasers: Effect of Substrate Misorientation
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