Summary form only given. 3 W CW output power is obtained from InGaAs-InGaAsP-InGaP uncoated, 100-/spl mu/m-wide-stripe, quantum well diode lasers grown by low-pressure MOCVD on exact (100) GaAs substrates. Lasers grown on misoriented substrates exhibit increased temperature sensitivity of threshold and differential quantum efficiency.


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    Title :

    High CW output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation


    Contributors:
    Mawst, L.J. (author) / Bhattacharya, A. (author) / Nesnidal, M. (author) / Lopez, J. (author) / Botez, D. (author) / Morris, J.A. (author) / Zory, P. (author)


    Publication date :

    1995-01-01


    Size :

    161824 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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