Low Temperature Wafer Direct Bonding Between GaInAsP Etch Stop Layer and Gd/sub 3/Ga/sub 5/O/sub 12/
01.01.1998
111093 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Wafer Surface Treatment for Bonding GaInAsP and Magnetooptic Garnet
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