GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals. This technique has been applied with the aim of integrating a laser diode and an optical isolator.
Wafer surface treatment for bonding GaInAsP and magnetooptic garnet
01.01.1999
197033 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Wafer Surface Treatment for Bonding GaInAsP and Magnetooptic Garnet
British Library Conference Proceedings | 1999
|Growth and Characterization of Magnetooptic Garnet Films With Planar Uniaxial Anisotropy
British Library Conference Proceedings | 2005
|British Library Online Contents | 1997
|Magnetooptic Effects in Surface-Plasmon-Polaritons Slab Waveguides
British Library Online Contents | 2006
|