GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals. This technique has been applied with the aim of integrating a laser diode and an optical isolator.


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    Titel :

    Wafer surface treatment for bonding GaInAsP and magnetooptic garnet


    Beteiligte:
    Mizumoto, T. (Autor:in) / Yokoi, H. (Autor:in) / Shimizu, M. (Autor:in) / Waniishi, T. (Autor:in) / Futakuchi, N. (Autor:in) / Kaida, N. (Autor:in) / Nakano, Y. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    197033 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Wafer Surface Treatment for Bonding GaInAsP and Magnetooptic Garnet

    IEEE | British Library Conference Proceedings | 1999


    Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals

    Yokoi, H. / Mizumoto, T. / Futakuchi, N. et al. | IEEE | 1999


    Growth and Characterization of Magnetooptic Garnet Films With Planar Uniaxial Anisotropy

    Fratello, V. J. / Mnushkina, I. / Licht, S. J. et al. | British Library Conference Proceedings | 2005



    Magnetooptic Effects in Surface-Plasmon-Polaritons Slab Waveguides

    Sepulveda, B. / Lechuga, L. M. / Armelles, G. | British Library Online Contents | 2006