GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals. This technique has been applied with the aim of integrating a laser diode and an optical isolator.
Wafer surface treatment for bonding GaInAsP and magnetooptic garnet
1999-01-01
197033 byte
Conference paper
Electronic Resource
English
Wafer Surface Treatment for Bonding GaInAsP and Magnetooptic Garnet
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