With the use of atomic force microscopy (AFM) we show excellent agreement between theoretical predictions and actual measurements. From this analysis, we have developed a level of confidence in future facet roughness calculations based on data obtained through slope efficiency and far field data. Our rms facet roughness is 220 /spl Aring/, well below the industrial standard. We have also measured the facet vertically to be 2" which, to our knowledge, is the best to date for methane-based InP laser facet etching.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High quality dry etched InP semiconductor laser facets and characterization using atomic force microscopy


    Beteiligte:
    Whaley, R.D. (Autor:in) / Gopalan, B. (Autor:in) / Degenais, M. (Autor:in) / Gomez, R.D. (Autor:in) / Agarwala, S. (Autor:in) / Johnson, F.G. (Autor:in) / King, O. (Autor:in) / Stone, D.R. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    204242 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High Quality Dry Etched InP Semiconductor Laser Facets and Characterization using Atomic Force Microscopy

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Analysis Of Surface Roughness On Semiconductor Laser Etched Facets

    Herrick, R.W. / Sabo, L.G. / Levy, J.L. | IEEE | 1991


    Semiconductor lasers with dry-etched facets [2153-21]

    Ou, S. S. / Yang, J. J. / Jansen, M. et al. | British Library Conference Proceedings | 1994



    InGaAsP/InP 1.55-m lasers with chemically assisted ion beam-etched facets

    Daleiden, J. / Eisele, K. / Keller, R. et al. | British Library Online Contents | 1996