With the use of atomic force microscopy (AFM) we show excellent agreement between theoretical predictions and actual measurements. From this analysis, we have developed a level of confidence in future facet roughness calculations based on data obtained through slope efficiency and far field data. Our rms facet roughness is 220 /spl Aring/, well below the industrial standard. We have also measured the facet vertically to be 2" which, to our knowledge, is the best to date for methane-based InP laser facet etching.
High quality dry etched InP semiconductor laser facets and characterization using atomic force microscopy
01.01.1997
204242 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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