With the use of atomic force microscopy (AFM) we show excellent agreement between theoretical predictions and actual measurements. From this analysis, we have developed a level of confidence in future facet roughness calculations based on data obtained through slope efficiency and far field data. Our rms facet roughness is 220 /spl Aring/, well below the industrial standard. We have also measured the facet vertically to be 2" which, to our knowledge, is the best to date for methane-based InP laser facet etching.


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    Title :

    High quality dry etched InP semiconductor laser facets and characterization using atomic force microscopy


    Contributors:
    Whaley, R.D. (author) / Gopalan, B. (author) / Degenais, M. (author) / Gomez, R.D. (author) / Agarwala, S. (author) / Johnson, F.G. (author) / King, O. (author) / Stone, D.R. (author)


    Publication date :

    1997-01-01


    Size :

    204242 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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