Summary form only given. The material was grown by gas source molecular beam epitaxy (GSMBE) with only InGaAsN quantum well grown using solid source As. The active N species was generated by flowing nitrogen through a radio frequency (RF) plasma source. The active region of the laser contained a single 9 nm thick, strained InGaAsN/GaAs quantum well embedded in a 0.18 /spl mu/m thick GaAs separate confinement layer.
High efficiency InGaAsN based quantum well lasers grown by GSMBE using a solid As source
01.01.2001
154162 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
TuY5 High Efficiency InGaAsN based Quantum Well Lasers Grown by GSMBE using a Solid as Source
British Library Conference Proceedings | 2001
|Carrier Transport and Injection Efficiency of InGaAsN Quantum-Well Lasers
British Library Conference Proceedings | 2004
|Low threshold current, high efficiency 1.3 mum wavelength InGaAsN-GaAs based quantum well lasers
British Library Conference Proceedings | 1999
|The effect of nitrogen in InGaAsN quantum well lasers
IEEE | 2004
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