Summary form only given. The material was grown by gas source molecular beam epitaxy (GSMBE) with only InGaAsN quantum well grown using solid source As. The active N species was generated by flowing nitrogen through a radio frequency (RF) plasma source. The active region of the laser contained a single 9 nm thick, strained InGaAsN/GaAs quantum well embedded in a 0.18 /spl mu/m thick GaAs separate confinement layer.


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    Titel :

    High efficiency InGaAsN based quantum well lasers grown by GSMBE using a solid As source


    Beteiligte:
    Jian Wei, (Autor:in) / Fengnian Xia, (Autor:in) / Chunqiang Li, (Autor:in) / Forrest, S.R. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    154162 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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