Summary form only given. The material was grown by gas source molecular beam epitaxy (GSMBE) with only InGaAsN quantum well grown using solid source As. The active N species was generated by flowing nitrogen through a radio frequency (RF) plasma source. The active region of the laser contained a single 9 nm thick, strained InGaAsN/GaAs quantum well embedded in a 0.18 /spl mu/m thick GaAs separate confinement layer.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    High efficiency InGaAsN based quantum well lasers grown by GSMBE using a solid As source


    Contributors:
    Jian Wei, (author) / Fengnian Xia, (author) / Chunqiang Li, (author) / Forrest, S.R. (author)


    Publication date :

    2001-01-01


    Size :

    154162 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Carrier transport and injection efficiency of InGaAsN quantum-well lasers

    Jeng-Ya Yeh, / Mawst, L.J. / Tansu, N. | IEEE | 2004


    Carrier Transport and Injection Efficiency of InGaAsN Quantum-Well Lasers

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004



    Temperature Sensitivity of 1360-nm InGaAsN Quantum Well Lasers

    IEEE | British Library Conference Proceedings | 2003