All solid source molecular beam epitaxy (SSMBE), where only solid group-V sources are used, eliminates fabrication problems. We present our results on the development of 1.3 /spl mu/m AlGaInAs-AlInAs-InP laser diodes, and show that high-performance laser diodes can be prepared from SSMBE grown material.


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    Titel :

    Uncooled operation of 1.3 /spl mu/m AlGaInAs/AlInAs/InP laser diodes grown by solid source molecular beam epitaxy


    Beteiligte:
    Savolainen, P. (Autor:in) / Toivonen, M. (Autor:in) / Orsila, S. (Autor:in) / Pessa, M. (Autor:in) / Salokatve, A. (Autor:in) / Asonen, H. (Autor:in) / Panarello, T. (Autor:in) / Murison, R. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    143838 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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