All solid source molecular beam epitaxy (SSMBE), where only solid group-V sources are used, eliminates fabrication problems. We present our results on the development of 1.3 /spl mu/m AlGaInAs-AlInAs-InP laser diodes, and show that high-performance laser diodes can be prepared from SSMBE grown material.
Uncooled operation of 1.3 /spl mu/m AlGaInAs/AlInAs/InP laser diodes grown by solid source molecular beam epitaxy
01.01.1998
143838 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1998
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