We report on a very high-power red laser diodes producing over two watts continuous-wave operation. Preliminary tests show no catastrophic optical damage. Devices have a low threshold current density and high slope efficiency.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High-power 2.1 W CW-operation of 650 nm laser diodes grown by solid-source molecular beam epitaxy


    Beteiligte:
    Tukiainen, A.T. (Autor:in) / Toikkanen, L.J. (Autor:in) / Hirvonen, I.A.T. (Autor:in) / Pessa, M. (Autor:in) / Tihanyi, P.L. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    127157 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Uncooled Operation of 1.3 m AlGaInAs/AlInAs/InP Laser Diodes Grown by Solid Source Molecular Beam Epitaxy

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998



    High-quality red laser material grown by solid-source molecular beam epitaxy

    Toikkanen, L.J. / Tukiainen, A.K. / Hirvonen, I.A.T. et al. | IEEE | 2003


    Oxide-confined AlGaInP/AlGaAs Visible Resonant Cavity Light-emitting Diodes Grown by Solid Source Molecular Beam Epitaxy

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997