We present high-quality AlGaInP/GaInP heterostructures for visible light laser diodes. Material quality is validated by processing lasers at 650 nm. Over 2 W output and a low threshold current density was obtained.


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    Titel :

    High-quality red laser material grown by solid-source molecular beam epitaxy


    Beteiligte:
    Toikkanen, L.J. (Autor:in) / Tukiainen, A.K. (Autor:in) / Hirvonen, I.A.T. (Autor:in) / Pessa, M. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    79935 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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