Summary form only given. In conclusion, we have fabricated 1.3-/spl mu/m AlGaInAs-InP strain-compensated multi-quantum-well self-aligned ridge lasers with excellent high-temperature and high-speed characteristics. In the talk, device characteristics of further optimized 1.3-/spl mu/m AlGaInAs-InP uncooled lasers will be presented comprehensively.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Ultra-high temperature and ultra-high speed operation of 1.3 /spl mu/m AlGaInAs/InP uncooled laser diodes


    Beteiligte:
    Wang, M.C. (Autor:in) / Lin, W. (Autor:in) / Shi, T.T. (Autor:in) / Liao, H.H. (Autor:in) / Chang, H.L. (Autor:in) / Su, J.Y. (Autor:in) / Tu, Y.K. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    174128 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Ultra-High Temperature and Ultra-High Speed Operation of 1.3um AlGaInAs/InP Uncooled Laser Diodes

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    Uncooled Operation of 1.3 m AlGaInAs/AlInAs/InP Laser Diodes Grown by Solid Source Molecular Beam Epitaxy

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998



    Uncooled Rocket Nozzles for Ultra-High Temperature Propellants

    Kraus, George | SAE Technical Papers | 1962


    High Speed Ultra-Low Chirp 1.55 m GaInAs/AlGaInAs MQW BRS DFB Lasers

    Blez, M. / Kazmierski, C. / Mathoorasing, D. et al. | British Library Conference Proceedings | 1992