Summary form only given. In conclusion, we have fabricated 1.3-/spl mu/m AlGaInAs-InP strain-compensated multi-quantum-well self-aligned ridge lasers with excellent high-temperature and high-speed characteristics. In the talk, device characteristics of further optimized 1.3-/spl mu/m AlGaInAs-InP uncooled lasers will be presented comprehensively.


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    Title :

    Ultra-high temperature and ultra-high speed operation of 1.3 /spl mu/m AlGaInAs/InP uncooled laser diodes


    Contributors:
    Wang, M.C. (author) / Lin, W. (author) / Shi, T.T. (author) / Liao, H.H. (author) / Chang, H.L. (author) / Su, J.Y. (author) / Tu, Y.K. (author)


    Publication date :

    1995-01-01


    Size :

    174128 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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