Summary form only given. In conclusion, we have fabricated 1.3-/spl mu/m AlGaInAs-InP strain-compensated multi-quantum-well self-aligned ridge lasers with excellent high-temperature and high-speed characteristics. In the talk, device characteristics of further optimized 1.3-/spl mu/m AlGaInAs-InP uncooled lasers will be presented comprehensively.
Ultra-high temperature and ultra-high speed operation of 1.3 /spl mu/m AlGaInAs/InP uncooled laser diodes
1995-01-01
174128 byte
Conference paper
Electronic Resource
English
Ultra-High Temperature and Ultra-High Speed Operation of 1.3um AlGaInAs/InP Uncooled Laser Diodes
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