All solid source molecular beam epitaxy (SSMBE), where only solid group-V sources are used, eliminates fabrication problems. We present our results on the development of 1.3 /spl mu/m AlGaInAs-AlInAs-InP laser diodes, and show that high-performance laser diodes can be prepared from SSMBE grown material.


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    Title :

    Uncooled operation of 1.3 /spl mu/m AlGaInAs/AlInAs/InP laser diodes grown by solid source molecular beam epitaxy


    Contributors:
    Savolainen, P. (author) / Toivonen, M. (author) / Orsila, S. (author) / Pessa, M. (author) / Salokatve, A. (author) / Asonen, H. (author) / Panarello, T. (author) / Murison, R. (author)


    Publication date :

    1998-01-01


    Size :

    143838 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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