Catastrophic optical damage (COD) and other facet-related degradation of high power 830 nm laser diodes was analyzed. Correlation between COD output power limit and the COD depth into the laser and its application to separate facet-related degradation from bulk degradation is described. The role of coating defects and contamination in the package environment as analyzed by SEM/EDS, Auger etc., is described. The diodes described here are GaAs/AlGaAs single quantum well gain guided lasers.


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    Titel :

    Analysis of facet degradation of high power 830 nm laser diodes


    Beteiligte:
    Pendse, D.R. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    173736 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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