Catastrophic optical damage (COD) and other facet-related degradation of high power 830 nm laser diodes was analyzed. Correlation between COD output power limit and the COD depth into the laser and its application to separate facet-related degradation from bulk degradation is described. The role of coating defects and contamination in the package environment as analyzed by SEM/EDS, Auger etc., is described. The diodes described here are GaAs/AlGaAs single quantum well gain guided lasers.
Analysis of facet degradation of high power 830 nm laser diodes
01.01.1996
173736 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Analysis of Facet Degradation of High Power 830nm Laser Diodes
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