Catastrophic optical damage (COD) and other facet-related degradation of high power 830 nm laser diodes was analyzed. Correlation between COD output power limit and the COD depth into the laser and its application to separate facet-related degradation from bulk degradation is described. The role of coating defects and contamination in the package environment as analyzed by SEM/EDS, Auger etc., is described. The diodes described here are GaAs/AlGaAs single quantum well gain guided lasers.


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    Title :

    Analysis of facet degradation of high power 830 nm laser diodes


    Contributors:


    Publication date :

    1996-01-01


    Size :

    173736 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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