Catastrophic optical damage (COD) and other facet-related degradation of high power 830 nm laser diodes was analyzed. Correlation between COD output power limit and the COD depth into the laser and its application to separate facet-related degradation from bulk degradation is described. The role of coating defects and contamination in the package environment as analyzed by SEM/EDS, Auger etc., is described. The diodes described here are GaAs/AlGaAs single quantum well gain guided lasers.
Analysis of facet degradation of high power 830 nm laser diodes
1996-01-01
173736 byte
Conference paper
Electronic Resource
English
Analysis of Facet Degradation of High Power 830nm Laser Diodes
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