Using a novel MOVPE fabrication technique and a weakly guiding waveguide structure high brightness InGaAs-GaAs-AlGaAs laser diodes with a narrow beam waist were produced. These devices were pulse tested and gave a peak output power of 0.58 Watts at 3 Amps with a beam waist of only 11 /spl mu/m.
High brightness curved-facet laser diodes operating at 980 nm
01.01.1996
176793 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High Brightness Curved-Facet Laser Diodes Operating at 980 nm
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