Using a novel MOVPE fabrication technique and a weakly guiding waveguide structure high brightness InGaAs-GaAs-AlGaAs laser diodes with a narrow beam waist were produced. These devices were pulse tested and gave a peak output power of 0.58 Watts at 3 Amps with a beam waist of only 11 /spl mu/m.


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    Titel :

    High brightness curved-facet laser diodes operating at 980 nm


    Beteiligte:
    Braddell, J. (Autor:in) / O'Brien, P. (Autor:in) / McInerney, J. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    176793 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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