Two advanced 60 V power MOSFET technologies are presented for automotive applications. The first is a submicron channel DMOS technology which yields a specific on-resistance of 1.7 m Omega -cm2, about half the value obtained by present production DMOS devices. The second is a trench DMOS technology developed to yield 1.1 m Omega cm2 of specific on-resistance. Devices fabricated from both technologies exhibit superior rugged device performances in unclamped inductive switching (UIS). Design and process considerations are also discussed.


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    Title :

    Advances in power MOSFET technologies for automotive applications


    Additional title:

    Fortschritte in der Leistungs-MOSFET-Technologie für automotive Anwendungen


    Contributors:
    Owyang, K. (author) / Bulucea, C. (author) / Hshieh, F.I. (author) / Yilmaz, H. (author)

    Published in:

    Publication date :

    1989


    Size :

    6 Seiten, 10 Quellen


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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