An advanced trench Power MOSFET technology has been developed for the new 42 V Automotive Applications. Device characteristics that are important for Integrated Starter Generator applications were identified and incorporated within the MOSFET, resulting in this novel technology. Key parameters include: a 75 V BVdss rating, low Rds(on), low Gate Charge, robust avalanche energy capability and ease of paralleling. All of these parameters were achieved through the optimization of a novel self-aligned contact trench technology in concert with structure and vertical profile optimization.


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    Title :

    Advanced trench power MOSFET technology for 42 volt automotive applications


    Contributors:
    Kocon, C. (author) / Stokes, R. (author) / Rexer, C. (author)


    Publication date :

    2002


    Size :

    4 Seiten, 9 Bilder, 1 Tabelle, 4 Quellen


    Type of media :

    Conference paper


    Type of material :

    Storage medium


    Language :

    English




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