Two advanced 60 V power MOSFET technologies are presented for automotive applications. The first is a submicron channel DMOS technology which yields a specific on-resistance of 1.7 m Omega -cm2, about half the value obtained by present production DMOS devices. The second is a trench DMOS technology developed to yield 1.1 m Omega cm2 of specific on-resistance. Devices fabricated from both technologies exhibit superior rugged device performances in unclamped inductive switching (UIS). Design and process considerations are also discussed.
Advances in power MOSFET technologies for automotive applications
Fortschritte in der Leistungs-MOSFET-Technologie für automotive Anwendungen
Automotive Power Electronics ; 9-14
1989
6 Seiten, 10 Quellen
Aufsatz (Konferenz)
Englisch
Power MOSFET Technologies and Design Considerations for Automotive Electronic Systems
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