Two advanced 60 V power MOSFET technologies are presented for automotive applications. The first is a submicron channel DMOS technology which yields a specific on-resistance of 1.7 m Omega -cm2, about half the value obtained by present production DMOS devices. The second is a trench DMOS technology developed to yield 1.1 m Omega cm2 of specific on-resistance. Devices fabricated from both technologies exhibit superior rugged device performances in unclamped inductive switching (UIS). Design and process considerations are also discussed.


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    Titel :

    Advances in power MOSFET technologies for automotive applications


    Weitere Titelangaben:

    Fortschritte in der Leistungs-MOSFET-Technologie für automotive Anwendungen


    Beteiligte:
    Owyang, K. (Autor:in) / Bulucea, C. (Autor:in) / Hshieh, F.I. (Autor:in) / Yilmaz, H. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1989


    Format / Umfang :

    6 Seiten, 10 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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