An intelligent power MOSFET with built-in reverse battery protection, which is essential for automotive power switches, has been developed. The reverse battery protection is achieved without using external control signals.This new power MOSFET can replace the conventional three-terminal power MOSFETs used in automotive applications. Its positive drain breakdown voltage is 71 V and the negative drain current at a drain voltage of about 16 V is only about 750 microA. On resistance is 170 mOhm. Using the latest fabrication process now available for commercial products, the on-resistance can be reduced to less than 50 mOhm in a TO-220 package.


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    Titel :

    An intelligent power MOSFET with reverse battery protection for automotive applications


    Weitere Titelangaben:

    Ein intelligenter Leistungs-MOSFET mit reversem Batterieschutz für Anwendungen im KFZ-Bereich


    Beteiligte:
    Sakamoto, K. (Autor:in) / Fuchigami, N. (Autor:in) / Takagawa, K. (Autor:in)


    Erscheinungsdatum :

    1996


    Format / Umfang :

    4 Seiten, 8 Bilder, 1 Tabelle, 5 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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