A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAMs) is presented. The sources of single-event (SE) radiation particles, causes of circuit information loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed. Radiation effects are the leading inhibitor to the reduction of the stored charge and to a further scaling of the devices. The increased use of DRAMs in space is a challenge for the technology.


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    Title :

    Cosmic and terrestrial single-event radiation effects in dynamic random access memories


    Additional title:

    Kosmische und terrestrische Einzelereigniseffekte in dynamischen RAMs


    Contributors:

    Published in:

    IEEE Transactions on Nuclear Science ; 43 , 2 Part I ; 576-593


    Publication date :

    1996


    Size :

    18 Seiten, 26 Bilder, 1 Tabelle, 96 Quellen




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English




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