A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAMs) is presented. The sources of single-event (SE) radiation particles, causes of circuit information loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed. Radiation effects are the leading inhibitor to the reduction of the stored charge and to a further scaling of the devices. The increased use of DRAMs in space is a challenge for the technology.
Cosmic and terrestrial single-event radiation effects in dynamic random access memories
Kosmische und terrestrische Einzelereigniseffekte in dynamischen RAMs
IEEE Transactions on Nuclear Science ; 43 , 2 Part I ; 576-593
1996
18 Seiten, 26 Bilder, 1 Tabelle, 96 Quellen
Article (Journal)
English
DRAM (dynamic RAM) , Strahlungsbelastung , Strahlungsfestigkeit , Raumfahrt , Raumfahrzeug , Weltraum , kosmische Strahlung , schweres Ion , Speicherzelle , Schaltbild , Alpha-Strahlung , ionisierende Strahlung , Ausfallwahrscheinlichkeit , MOS-FET , Signal-Rausch-Abstand , Speicherkapazität , Fehlerkorrektur
Optical Ring-Resonator Random-Access Memories
British Library Online Contents | 2008
|Optical Ring-Resonator Random-Access Memories
British Library Online Contents | 2008
|Optical Ring-Resonator Random-Access Memories
British Library Online Contents | 2008
|