We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.


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    Title :

    Radiation Effects of Commercial Resistive Random Access Memories


    Contributors:

    Conference:

    NASA Electronic Parts and Packaging (NEPP) Electronics Technology Workshop (ETW) ; 2014 ; Greenbelt, MD, United States


    Publication date :

    2014-06-17


    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English






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    Optical Ring-Resonator Random-Access Memories

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    Optical Ring-Resonator Random-Access Memories

    Tucker, R.S. / Riding, J.L. | British Library Online Contents | 2008