Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. Many of those experimental studies are summerized and the problems, test methodologies, and experimental results are examined. Previously unavailable information on SEGR is also provided.
Experimental studies of single-event gate rupture and burnout in vertical power MOSFET's
Untersuchung von Strahlungsschäden an Vertikal-Leistungs-MOSFETs
IEEE Transactions on Nuclear Science ; 43 , 2 Part I ; 533-545
1996
13 Seiten, 24 Bilder, 1 Tabelle, 47 Quellen
Article (Journal)
English
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