Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. Many of those experimental studies are summerized and the problems, test methodologies, and experimental results are examined. Previously unavailable information on SEGR is also provided.


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    Titel :

    Experimental studies of single-event gate rupture and burnout in vertical power MOSFET's


    Weitere Titelangaben:

    Untersuchung von Strahlungsschäden an Vertikal-Leistungs-MOSFETs


    Beteiligte:
    Titus, J.L. (Autor:in) / Wheatley, C.F. (Autor:in)

    Erschienen in:

    IEEE Transactions on Nuclear Science ; 43 , 2 Part I ; 533-545


    Erscheinungsdatum :

    1996


    Format / Umfang :

    13 Seiten, 24 Bilder, 1 Tabelle, 47 Quellen




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch





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