Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOS-FETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOS-FETs are catastrophic failure mechanisms that are initiated by the passage of a heavy ion through the device structure. Various analytical, semianalytical, and simulation models have been developed to help explain these phenomena. A review is presented of these models and their merits and limitations are explained. New results are included to illustrate the approaches.
A review of the techniques used for modeling single-event effects in power MOSFET's
Benutzte Verfahren zur Modellierung der Einzelereigniseffekte in Leistungs-MOSFETs
IEEE Transactions on Nuclear Science ; 43 , 2 Part I ; 546-560
1996
15 Seiten, 23 Bilder, 40 Quellen
Article (Journal)
English
MOS-FET , Strahlungsbelastung , Strahlungsfestigkeit , schweres Ion , Ausfallwahrscheinlichkeit , Modellsimulation , Raumfahrt , Raumfahrzeug , Weltraum , zerstörende Prüfung , Photolithographie , Leistungstransformator , Leistungstransistor , Schichtstruktur , Zufallsprozess , Stoßionisation , ionisierende Strahlung , elektrischer Durchbruch , Feldverteilung , elektrisches Feld , Lawinendurchbruch
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