Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOS-FETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOS-FETs are catastrophic failure mechanisms that are initiated by the passage of a heavy ion through the device structure. Various analytical, semianalytical, and simulation models have been developed to help explain these phenomena. A review is presented of these models and their merits and limitations are explained. New results are included to illustrate the approaches.


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    Title :

    A review of the techniques used for modeling single-event effects in power MOSFET's


    Additional title:

    Benutzte Verfahren zur Modellierung der Einzelereigniseffekte in Leistungs-MOSFETs


    Contributors:
    Johnson, G.H. (author) / Palau, J.M. (author) / Dachs, C. (author) / Galloway, K.F. (author) / Schrimpf, R.D. (author)

    Published in:

    IEEE Transactions on Nuclear Science ; 43 , 2 Part I ; 546-560


    Publication date :

    1996


    Size :

    15 Seiten, 23 Bilder, 40 Quellen




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English






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