The impact of FIB on integrated circuits can be modeled as a positive charge (Ga(+)) accumulation on the passivation surface. High electrical fields across the oxide induce Fowler-Nordheim currents resulting in charge trapping in the oxide which in turn effects circuit parameters. MOS technologies are less sensitive to FIB operations than bipolar technologies because the gate of the MOS acts as an electrostatic shield. MOS transistors are relatively immune to FIB as long as they are grounded and after 2000 hours of burn-in all structures were functional with performance similar to the reference. FIB on future technologies is expected on one hand to benefit from the use of additional metal lines and power planes that protect active areas, and on the other hand, to be less protected by input diodes being less tolerant to the high voltage on transistor gates induced by FIB irradiation. These burn-in studies allowed the authors to give a positive answer to the question concerning the reliability of FIB modified devices. This also confirmed the experience the authors have at the CNES-Thales Lab. on different FIB modified circuits still in operation after several years. With UV (20 min.) and thermal annealing (150 deg C/24 hours), a majority of the degradation can be recovered. Device parameter drift is practically stabilized. The work shows that if the circuit characteristics are still within their specification it means that this FIB modified device should keep working for several years.


    Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Reliability of integrated circuits modified by focused ion beam for space applications


    Additional title:

    Zuverlässigkeit von durch fokussierte Ionenstrahlbearbeitung modifizierten integrierten Schaltungen für die Raumfahrt


    Contributors:
    Desplats, R. (author) / Courrege, J.C. (author) / Benteo, B. (author) / Antoniou, N. (author) / Monforte, D. (author)


    Publication date :

    2002


    Size :

    10 Seiten, 14 Bilder, 2 Tabellen, 11 Quellen




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Reliability of integrated circuits modified by focused ion beam for space applications

    Desplats, R. / Courrege, J. C. / Benteo, B. et al. | British Library Conference Proceedings | 2002


    High reliability circuits for space applications

    Gregoris, G. | Tema Archive | 1995



    Study on the method for the reliability test of focused ion beam

    Lee, S. H. / Kang, H. W. / Cho, D. W. et al. | British Library Online Contents | 2007


    High power laser with integrated lens using focused ion beam etching

    Rashed, A.M. / Williams, K.A. / Penty, R.V. et al. | IEEE | 1999