The GS450h requires higher system voltage to increase the motor output. For the insulated gate bipolar transistor (IGBT) that serves as the built-in switching device in the intelligent power module (IPM), higher voltage means greater loss and a larger device surface area, and it can also reduce the vehicle's fuel economy performance and increase its cost. To solve these issues, IGBT losses were reduced by (1) using a trench structure to make the IGBT more compact and (2) using a new structure in which the concentration of impurities in the drift layer is optimized. As a result, the device surface area was reduced by 10%, losses were reduced by 14%, and improved vehicle performance was achieved.


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    Title :

    Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System


    Additional title:

    Sae Technical Papers



    Conference:

    SAE World Congress & Exhibition ; 2007



    Publication date :

    2007-04-16




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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