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    Title :

    Development of an insulated gate bipolar transistor for the high-power hybrid system


    Additional title:

    Die Entwicklung eines IGBT fuer einen Elektrohybridantrieb hoher Leistung.



    Publication date :

    2007


    Size :

    4 pages


    Remarks:

    SAE-Paper;2007-01-0293;2007;Advanced Hybrid Vehicle Powertrains;SAE Spec.Publ.; SP-2101


    Type of media :

    Miscellaneous


    Type of material :

    Print


    Language :

    English



    Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System

    Nishiwaki, Katsuhiko / Ishiko, Masayasu / Togawa, Norihiro et al. | SAE Technical Papers | 2007


    Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System

    Togawa, N. / Harada, T. / Nishiwaki, K. et al. | British Library Conference Proceedings | 2007


    Insulated gate bipolar transistor family

    Aloisi, P. | Tema Archive | 1995


    2007-01-0293 Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System

    Togawa, N. / Harada, T. / Nishiwaki, K. et al. | British Library Conference Proceedings | 2007