The GS450h requires higher system voltage to increase the motor output. For the insulated gate bipolar transistor (IGBT) that serves as the built-in switching device in the intelligent power module (IPM), higher voltage means greater loss and a larger device surface area, and it can also reduce the vehicle's fuel economy performance and increase its cost. To solve these issues, IGBT losses were reduced by (1) using a trench structure to make the IGBT more compact and (2) using a new structure in which the concentration of impurities in the drift layer is optimized. As a result, the device surface area was reduced by 10%, losses were reduced by 14%, and improved vehicle performance was achieved.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:

    Kongress:

    SAE World Congress & Exhibition ; 2007



    Erscheinungsdatum :

    16.04.2007




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Development of an insulated gate bipolar transistor for the high-power hybrid system

    Togawa,N. / Harada,T. / Nishiwaki,K. et al. | Kraftfahrwesen | 2007


    Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System

    Togawa, N. / Harada, T. / Nishiwaki, K. et al. | British Library Conference Proceedings | 2007


    Insulated gate bipolar transistor family

    Aloisi, P. | Tema Archiv | 1995


    2007-01-0293 Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System

    Togawa, N. / Harada, T. / Nishiwaki, K. et al. | British Library Conference Proceedings | 2007