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    Titel :

    Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System


    Beteiligte:
    Togawa, N. (Autor:in) / Harada, T. (Autor:in) / Nishiwaki, K. (Autor:in) / Tagami, R. (Autor:in) / Kushida, T. (Autor:in) / Kawaji, S. (Autor:in) / Ishiko, M. (Autor:in) / Society of Automotive Engineers

    Kongress:

    WORLD CONGRESS, Society of Automotive Engineers ; 2007 ; Detroit, MI



    Erscheinungsdatum :

    01.01.2007


    Format / Umfang :

    2007-01-0293


    Anmerkungen:

    SAE 2007-01-0100 - 2007-01-0674 held with gaps



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Development of an insulated gate bipolar transistor for the high-power hybrid system

    Togawa,N. / Harada,T. / Nishiwaki,K. et al. | Kraftfahrwesen | 2007


    Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System

    Nishiwaki, Katsuhiko / Ishiko, Masayasu / Togawa, Norihiro et al. | SAE Technical Papers | 2007


    Insulated gate bipolar transistor family

    Aloisi, P. | Tema Archiv | 1995


    2007-01-0293 Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System

    Togawa, N. / Harada, T. / Nishiwaki, K. et al. | British Library Conference Proceedings | 2007