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    Title :

    Temperature-induced metal–semiconductor transition in W-doped VO2 films studied by photoelectron spectroscopy




    Publication date :

    2007



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English



    Classification :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher / 52.52 Thermische Energieerzeugung, Wärmetechnik / 52.56 Regenerative Energieformen, alternative Energieformen / 50.70 Energie: Allgemeines



    Luminescent properties of nitrogen doped gap semiconductor studied with photothermal deflection spectroscopy [2554-30]

    Dong, M. / Ding, Z. / Tong, L. et al. | British Library Conference Proceedings | 1995


    Defect population in Ge doped silica studied by fluorescence spectroscopy

    Poumellec, B. / Cens, H. / Trukhin, A. et al. | British Library Conference Proceedings | 1997


    Photoelectron spectroscopy by electron attachment

    Ajello, J. M. / Chutjian, A. | NTRS | 1977