The ferroelectric (FE) properties of hafnium zirco-nium oxide $(\text{Hf}_{l-x}\text{Zr}_{x}\mathrm{O}_{2})$, a material of importance for many electronic applications such as low-power computing and non-volatile memories, are heavily dependent on the Zr content $(x)$. Here we report that in some cases, samples with the same $x$ display different FE character and these variations can be related to changes in the location of the Zr $3\mathrm{t}1$ and $O Is$ peaks in X-ray photoelectron spectroscopy (XPS) spectra. This suggests that lattice strain and Zr-O bonding variations play a significant role in the FE character of $\text{Hf}_{l-x}\text{Zr}_{x}\mathrm{O}_{2}$ thin films.


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    Title :

    Differences in Ferroelectric Characteristics of Similar Hafnium Zirconium Oxide Films Studied Using X - Ray Photoelectron Spectroscopy


    Contributors:


    Publication date :

    2024-07-15


    Size :

    4306937 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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