The ferroelectric (FE) properties of hafnium zirco-nium oxide $(\text{Hf}_{l-x}\text{Zr}_{x}\mathrm{O}_{2})$, a material of importance for many electronic applications such as low-power computing and non-volatile memories, are heavily dependent on the Zr content $(x)$. Here we report that in some cases, samples with the same $x$ display different FE character and these variations can be related to changes in the location of the Zr $3\mathrm{t}1$ and $O Is$ peaks in X-ray photoelectron spectroscopy (XPS) spectra. This suggests that lattice strain and Zr-O bonding variations play a significant role in the FE character of $\text{Hf}_{l-x}\text{Zr}_{x}\mathrm{O}_{2}$ thin films.
Differences in Ferroelectric Characteristics of Similar Hafnium Zirconium Oxide Films Studied Using X - Ray Photoelectron Spectroscopy
15.07.2024
4306937 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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