High-performance power metal/oxide/semiconductor field-effect transistors (MOSFETs) fabricated in silicon carbide. Devices offer potential advantages over silicon-based MOSFETs, including lower "on" - state resistances at same rated voltages, ability to operate at higher temperatures, and higher thermal conductivity. Also more resistant to damage by ionizing radiation, an advantage for switching appications in nuclear facilities.
Power MOSFETs Formed In Silicon Carbide
NASA Tech Briefs ; 19 , 2
1995-02-01
Miscellaneous
No indication
English
Power MOSFETS Formed in Silicon Carbide
Online Contents | 1995
High Temperature Performance Mapping and Failure Analysis of 4H-Silicon Carbide MOSFETS
British Library Conference Proceedings | 1997
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