High-performance power metal/oxide/semiconductor field-effect transistors (MOSFETs) fabricated in silicon carbide. Devices offer potential advantages over silicon-based MOSFETs, including lower "on" - state resistances at same rated voltages, ability to operate at higher temperatures, and higher thermal conductivity. Also more resistant to damage by ionizing radiation, an advantage for switching appications in nuclear facilities.


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    Titel :

    Power MOSFETs Formed In Silicon Carbide


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.02.1995



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch





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