Report describes experimental and computer-simulation study of multiple-bit errors caused by impingement of single energetic ions on 256-Kb dynamic random-access memory (DRAM) integrated circuit. Studies illustrate effects of different mechanisms for transport of charge from ion tracks to various elements of integrated circuits. Shows multiple-bit errors occur in two different types of clusters about ion tracks causing them.


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    Title :

    Multiple-Bit Errors Caused By Single Ions


    Contributors:

    Published in:

    Publication date :

    1991-07-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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