Report describes experimental and computer-simulation study of multiple-bit errors caused by impingement of single energetic ions on 256-Kb dynamic random-access memory (DRAM) integrated circuit. Studies illustrate effects of different mechanisms for transport of charge from ion tracks to various elements of integrated circuits. Shows multiple-bit errors occur in two different types of clusters about ion tracks causing them.
Multiple-Bit Errors Caused By Single Ions
NASA Tech Briefs ; 15 , 7
1991-07-01
Sonstige
Keine Angabe
Englisch
Recording-Pyrometer Errors Caused by Humidity Changes
SAE Technical Papers | 1932
Structural defects caused by swift ions in fluorite single crystals
British Library Online Contents | 2018
|Structural defects caused by swift ions in fluorite single crystals
British Library Online Contents | 2018
|Compiled Data on Single-Event Effects Caused by Heavy Ions
Online Contents | 1996