Report presents test data on susceptibility of new set of digital integrated circuits and other semiconductor products to single-event effects (soft errors and latchups) caused by heavy ions incident at high energies. Data used to develop generalizations for protecting electronic equipment from single-event effects. In some cases, tested parts selected as candidates for use in specific applications.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Compiled Data On Single-Event Effects Caused By Heavy Ions


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1996-04-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch





    Single-Event Upsets Caused by High-Energy Protons

    Price, W. E. / Nichols, D. K. / Smith, L. S. et al. | NTRS | 1986


    Multiple-Bit Errors Caused By Single Ions

    Zoutendyk, John A. / Edmonds, Larry D. / Smith, Laurence S. | NTRS | 1991


    Experimental study on heavy ion single event effects in SOI SRAMs

    Li, Yonghong / He, Chaohui / Zhao, Fazhan et al. | Tema Archiv | 2009