New type of photodetector adds options for design of imaging devices. Heterojunction-internal-photoemission (HIP) infrared photodetectors proposed for incorporation into planar arrays in imaging devices required to function well at wavelengths from 8 to 17 micrometers and at temperatures above 65 K. Photoexcited electrons cross energy barrier at heterojunction and swept toward collection layer. Array of such detectors made by etching mesa structures. HIP layers stacked to increase quantum efficiency. Also built into integrated circuits including silicon multiplexer/readout circuits.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    Heterojunction-Internal-Photoemission Infrared Detectors


    Contributors:

    Published in:

    Publication date :

    1991-01-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




    Si1-XGex/Si-Heterojunction Internal-Photoemission Detectors

    Lin, True-Lon / Maserjian, Joseph | NTRS | 1992


    Homojunction interfacial workfunction internal photoemission (HIWIP) infrared detectors (Invited Paper) [2554-20]

    Perera, A. G. U. / SPIE-The International Society for Optical Engineering | British Library Conference Proceedings | 1995


    Si~1~-~xGe~x/Si heterojunction internal photoemission long-wavelength infrared detector (Invited Paper) [2274-05]

    Lin, T. L. / Park, J. S. / Gunapala, S. D. et al. | British Library Conference Proceedings | 1994


    Layered Internal-Photoemission Sensor

    Fathauer, Robert W. | NTRS | 1990


    HgCdTe Infrared Detectors

    Norton, P. / Electrochemical Society | British Library Conference Proceedings | 1999